Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices
نویسندگان
چکیده
sReceived 11 February 2005; accepted 27 April 2005; published online 20 June 2005d Bright green electroluminescence with luminance up to 2800 cd/m2 is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb 3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from D3 to D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated. © 2005 American Institute of Physics. fDOI: 10.1063/1.1935766g
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